U.S. patent number 3,387,286: The ingenuity of Robert Dennard has literally changed the way the world works. In 1967 Dr. Dennard invented dynamic random access memory, now used in every computer in the world. In 1972 he was also among the collaborators who invented field effect transistors, which became the industry standard for developing silicon transistors. Dr. Dennard is an IBM Fellow at the IBM Thomas J. Watson Research Center in Yorktown Heights, New York, where he has been involved in microelectronics research and development. He is a member of the National Academy of Engineering and a Fellow of the Institute of Electrical and Electronic Engineers, which awarded him its Cledo Brunetti Award in 1982. Among other honors, he has received the National Medal of Technology. In 1954 he earned a Bachelor of Science in electrical engineering and in 1956 a Master of Science in electrical engineering, both from SMU. For his sustained and brilliant work in computer engineering, SMU is proud to honor alumnus Robert Heath Dennard with the degree of Doctor of Science, honoris causa.